Physics of Semiconductor Devices 4/e [Sze] 9781119429111

The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters.  

Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: 

• Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices 
• Offers completely updated and revised information that reflects advances in device concepts, performance, and application 
• Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy 
• Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only
• Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors 

Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field. 

頁數：944
版次：第4版
年份：2021年
規格：精裝/單色
ISBN：9781119429111

Part I Semiconductor Physics
Chapter 1 Physics and Properties of Semiconductors—A Review
Part II Device Building Blocks
Chapter 2 p-n Junctions
Chapter 3 Metal-Semiconductor Contacts
Chapter 4 Metal-Insulator-Semiconductor Capacitors
Part III Transistors
Chapter 5 Bipolar Transistors
Chapter 6 MOSFETs
Chapter 7 Nonvolatile Memory Devices
Chapter 8 JFETs, MESFETs, and MODFETs
Part IV Negative-Resistance and Power Devices
Chapter 9 Tunnel Devices
Chapter 10 IMPATT Diodes, TED and RST Devices
Chapter 11 Thyristors and Power Devices
Part V Photonic Devices and Sensors
Chapter 12 LEDs and Lasers
Chapter 13 Photodetectors and Solar Cells
Chapter 14 Sensors
Appendixes
A. List of Symbols
B. International System of Units
C. Unit Prefixes
D. Greek Alphabet
E. Physical Constants
F. Properties of Important Semiconductors
G. The Bloch Theorem and the Periodic Energy in the Reciprocal Lattice
H. Properties of Si and GaAs
I. The Derivations of Boltzmann Transport Equation and Hydrodynamic Model
J. Properties of SiO2 and Si3N4
K. Compact Models of Bipolar Transistors
L. Discovery of the Floating-Gate Memory Effect