Semiconductor Devices: Physics and Technology 3/e [Sze] 9780470537947

The awaited revision of Semiconductor Devices: Physics and Technology offers more than 50% new or revised material that reflects a multitude of important discoveries and advances in device physics and integrated circuit processing.

Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, the third edition presents students with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits.

Divided into three parts, this text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices bipolar, unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.

頁數：592
版次：第3版
年份：2012年
規格：精裝/雙色
ISBN：9780470537947

PART I SEMICONDUCTOR PHYSICS
Chapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium
Chapter 2 Carrier Transport Phenomena
PART II SEMICONDUCTOR DEVICES
Chapter 3 p-n Junction
Chapter 4 Bipolar Transistors and Related Devices
Chapter 5 MOS Capacitor and MOSFET
Chapter 6 Advanced MOSFET and Related Devices
Chapter 7 MESFET and Related Devices
Chapter 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices
Chapter 9 Light Emitting Diodes and Lasers
Chapter 10 Photodetectors and Solar Cells
PART III SEMICONDUCTOR TECHNOLOGY
Chapter 11 Crystal Growth and Epitaxy
Chapter 12 Film Formation
Chapter 13 Lithography and Etching
Chapter 14 Impurity Doping
Chapter 15 Integrated Devices
APPENDIX A List of Symbols
APPENDIX B International Systems of Units (SI Units)
APPENDIX C Unit Prefixes
APPENDIX D Greek Alphabet
APPENDIX E Physical Constants
APPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K
APPENDIX G Properties of Si and GaAs at 300 K
APPENDIX H Derivation of the Density of States in a Semiconductor
APPENDIX I Derivation of Recombination Rate for Indirect Recombination
APPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode
APPENDIX K Basic Kinetic Theory of Gases